1 mcr8dsm, MCR8DSN preferred device sensitive gate silicon controlled rectifiers reverse blocking thyristors designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. features ? pb?free package is available ? small size ? passivated die for reliability and uniformity ? low level triggering and holding characteristics ? available in two package styles surface mount lead form ? case 369c miniature plastic package ? straight leads ? case 369 ? epoxy meets ul 94, v?0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off?state voltage (note 1) (t j = ?40 to 110 c, sine wave, 50 to 60 hz, gate open) mcr8dsm MCR8DSN v drm, v rrm 600 800 v on?state rms current (180 conduction angles; t c = 90 c) i t(rms) 8.0 a average on?state current (180 conduction angles; t c = 90 c) i t(av) 5.1 a peak non-repetitive surge current (1/2 cycle, sine wave 60 hz, t j = 110 c) i tsm 90 a circuit fusing consideration (t = 8.3 msec) i 2 t 34 a 2 sec forward peak gate power (pulse width 1.0 sec, t c = 90 c) p gm 5.0 w forward average gate power (t = 8.3 msec, t c = 90 c) p g(av) 0.5 w forward peak gate current (pulse width 1.0 sec, t c = 90 c) i gm 2.0 a operating junction temperature range t j ?40 to 110 c storage temperature range t stg ?40 to 150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. scrs 8 amperes rms 600 ? 800 volts preferred devices are recommended choices for future use and best overall value. k g a pin assignment 1 2 3 anode gate cathode 4 anode dpak case 369c style 4 marking diagram y = year ww = work week x = m or n 1 2 3 4 yww cr 8dsx see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information www.kersemi.com
mcr8dsm, MCR8DSN www.kersemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance ? junction?to?case thermal resistance ? junction?to?ambient thermal resistance ? junction?to?ambient (note 2) r jc r ja r ja 2.2 88 80 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) characteristics symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm ; r gk = 1.0 k ) (note 3) t j = 25 c t j = 110 c i drm i rrm ? ? ? ? 10 500 a on characteristics peak reverse gate blocking voltage (i gr = 10 a) v grm 10 12.5 18 v peak reverse gate blocking current (v gr = 10 v) i rgm ? ? 1.2 a peak forward on?state voltage (note 4) (i tm = 16 a) v tm ? 1.4 1.8 v gate trigger current (continuous dc) (note 5) (v d = 12 v, r l = 100 )t j = 25 c t j = ?40 c i gt 5.0 ? 12 ? 200 300 a gate trigger voltage (continuous dc) (note 5) (v d = 12 v, r l = 100 )t j = 25 c t j = ?40 c t j = 110 c v gt 0.45 ? 0.2 0.65 ? ? 1.0 1.5 ? v holding current (v d = 12 v, initiating current = 200 ma, gate open) t j = 25 c t j = ?40 c i h 0.5 ? 1.0 ? 6.0 10 ma latching current (v d = 12 v, i g = 2.0 ma) t j = 25 c t j = ?40 c i l 0.5 ? 1.0 ? 6.0 10 ma total turn?on time (source voltage = 12 v, r s = 6.0 k , i t = 16 a(pk), r gk = 1.0 k ) (v d = rated v drm , rise time = 20kns, pulse width = 10 s) tgt ? 2.0 5.0 s dynamic characteristics characteristics symbol min typ max unit critical rate of rise of off?state voltage (v d = 0.67 x rated v drm , exponential waveform, r gk = 1.0 k , t j = 110 c) dv/dt 2.0 10 ? v/ s 2. surface mounted on minimum recommended pad size. 3. ratings apply for negative gate voltage or r gk = 1.0 k . devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. pulse test; pulse width 2.0 msec, duty cycle 2%. 5. r gk current not included in measurements. ordering information device package shipping 2 mcr8dsmt4 dpak 16 mm tape & reel (2.5 k / reel) mcr8dsmt4g dpak (pb?free) 16 mm tape & reel (2.5 k / reel) MCR8DSNt4 dpak 16 mm tape & reel (2.5 k / reel) 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mcr8dsm, MCR8DSN 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off?state forward voltage i drm peak forward blocking current v rrm peak repetitive off?state reverse voltage i rrm peak reverse blocking current v tm peak on?state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) figure 1. average current derating figure 2. on?state power dissipation 6.0 0 i t(av) , average on-state current (amps) 110 105 100 i t(av) , average on-state current (amps) 3.0 6.0 0 8.0 4.0 2.0 0 t c , maximum allowable case temperature ( c) p 95 85 1.0 2.0 3.0 1.0 2.0 6.0 10 12 , average power dissipation (watts) (av) dc 180 120 90 60 = 30 dc 180 120 90 60 = 30 5.0 4.0 5.0 90 4.0 = conduction angle = conduction angle www.kersemi.com
mcr8dsm, MCR8DSN 4 figure 3. on?state characteristics figure 4. transient thermal response figure 5. typical gate trigger current versus junction temperature figure 6. typical gate trigger voltage versus junction temperature 5.0 0 v t , instantaneous on-state voltage (volts) 100 10 1.0 0.1 t, time (ms) 1.0 0.1 1.0 0.1 0.01 4.0 -25 20 -40 t j , junction temperature ( c) 1000 10 t j , junction temperature ( c) -25 65 -40 0.1 20 5.0 i r (t) , transient thermal resistance 1.0 3.0 10 100 1000 10 k , gate trigger current ( a) i gt 50 110 65 5.0 110 35 50 v gt , gate trigger voltage (volts) , instantaneous on-state current (amps) t 80 typical @ t j = 25 c maximum @ t j = 25 c maximum @ t j = 110 c z jc(t) = r jc(t) r(t) 1.0 1.0 2.0 -10 35 95 100 -10 95 80 (normalized) gate open r gk = 1.0 k figure 7. typical holding current versus junction temperature figure 8. typical latching current versus junction temperature 65 110 -40 t j , junction temperature ( c) t j , junction temperature ( c) i h , holding current (ma) i 1.0 0.1 -25 5.0 20 50 95 , latching current (ma) l 10 -10 35 80 r gk = 1.0 k 65 110 -40 1.0 0.1 -25 5.0 20 50 95 10 -10 35 80 r gk = 1.0 k www.kersemi.com
mcr8dsm, MCR8DSN 5 figure 9. holding current versus gate?cathode resistance 1000 10 k 100 r gk , gate-cathode resistance (ohms) 10 6.0 4.0 2.0 0 i t j = 25 c figure 10. exponential static dv/dt versus gate?cathode resistance and junction temperature 100 r gk , gate-cathode resistance (ohms) 1000 10 1.0 static dv/dt (v/ s) t j = 110 c 1000 i gt = 10 a figure 11. exponential static dv/dt versus gate?cathode resistance and peak voltage static dv/dt (v/ s) figure 12. exponential static dv/dt versus gate?cathode resistance and gate trigger current sensitivity 8.0 i gt = 25 a , holding current (ma) h 100 90 c 70 c 100 r gk , gate-cathode resistance (ohms) 1000 10 1.0 t j = 110 c 1000 100 v pk = 800 v 600 v 400 v 100 r gk , gate-cathode resistance (ohms) 1000 10 1.0 v d = 800 v t j = 110 c 1000 100 i gt = 10 a static dv/dt (v/ s) i gt = 25 a www.kersemi.com
mcr8dsm, MCR8DSN 6 package dimensions dpak case 369c issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ?t? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 4: pin 1. cathode 2. anode 3. gate 4. anode www.kersemi.com
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